Semiconductor package and electronic device having the same

ABSTRACT

A semiconductor package includes a substrate including an antenna; a heating element disposed on a first surface of the substrate and connected to the antenna; a heat radiating part coupled to the heating element; and a signal transfer part disposed on the first surface of the substrate and configured to electrically connect the substrate to a main substrate. The heat radiating part may include a heat transfer part connected to the heating element and heat radiating terminals connecting the heat transfer part and the main substrate to each other.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a continuation of U.S. patent application Ser. No.15/832,807 filed on Dec. 6, 2017, which claims benefit under 35 USC §119(a) of Korean Patent Application No. 10-2017-0103390 filed on Aug.16, 2017 in the Korean Intellectual Property Office, the entiredisclosure of which is incorporated herein by reference for allpurposes.

BACKGROUND 1. Field

The following description relates to a semiconductor package and anelectronic device including the same.

2. Description of Related Art

In order to process high quality, high capacity data at high speed, afrequency band of a semiconductor package is increased. For example, inthe case of a semiconductor package for wireless communications, atechnology using a millimeter wave band of 27 GHz or more is considered.

Since a wavelength of a frequency is reduced to millimeters in themillimeter wave band, performance may be degraded when a conventionalsemiconductor package structure is used.

Therefore, a semiconductor package that operates efficiently in anultrahigh frequency band is required.

SUMMARY

This Summary is provided to introduce a selection of concepts in asimplified form that are further described below in the DetailedDescription. This Summary is not intended to identify key features oressential features of the claimed subject matter, nor is it intended tobe used as an aid in determining the scope of the claimed subjectmatter.

In one general aspect, a semiconductor package includes, a substrateincluding an antenna, a heating element disposed on a first surface ofthe substrate and connected to the antenna, a heat radiating partcoupled to the heating element, and a signal transfer part disposed onthe first surface of the substrate and electrically connecting thesubstrate to a main substrate, wherein the heat radiating part includesa heat transfer part connected to the heating element and heat radiatingterminals connecting the heat transfer part and the main substrate toeach other.

The heat transfer part may have a flat plate shape or a block shape andmay comprise a metal.

The semiconductor package may include connection terminals disposed onone side of the signal transfer part and connected to the mainsubstrate, wherein the heat radiating terminal may comprise a materialin common with the connection terminal and have substantially the samesize as the connection terminal.

The semiconductor package may include a sealing part substantiallyenclosing the signal transfer part and the heating element.

The heat transfer part may be embedded in the sealing part, and the heatradiating terminal may penetrate through the sealing part and may beconnected to the heat transfer part.

The heat transfer part may include one or more coupling grooves, and aportion of the sealing part may be disposed in the one or more couplinggrooves.

The one or more coupling grooves may include a hole through the heattransfer part, and the one or more coupling grooves may be disposed tobe distributed over an area of the heat transfer part.

The heat transfer part may include a step disposed in an edge of onesurface of a first surface bonded to the heating element and a secondsurface bonded to the heat radiating terminal.

A portion of the heat transfer part may be exposed externally of thesealing part, and the heat radiating terminal may be connected to theportion exposed externally of the sealing part.

The heat transfer part may include a case including an internal space,and the heat radiating element may be disposed in the internal space ofthe case.

The case may include one or more through-holes, and the sealing part maybe disposed in the internal space of the case through the through-holes.

The signal transfer part may include a connection conductor includingone end connected to the substrate and another end connected to the mainsubstrate through a connection terminal, and an insulating partenclosing the connection conductor.

The signal transfer part may include melted and cured solder balls inthe sealing part.

The semiconductor package may include a bonding layer interposed betweenthe heating element and the heat transfer part.

In one general aspect, an electronic device includes a semiconductorpackage including a substrate including a heating element and a signaltransfer part disposed on one surface and a heat radiating part coupledto the heating element, and a main substrate wherein the semiconductorpackage is disposed on a first surface, wherein the heat radiating partincludes a heat transfer part connected to the heating element and heatradiating terminals connecting the heat transfer part and the mainsubstrate to each other, and the main substrate includes one or moreheat radiating via connected to the heat radiating terminals.

The electronic device may include a heat radiating member coupled to asecond surface of the main substrate, wherein the heat radiating via maypenetrate through the main substrate and may be connected to the heatradiating member.

The electronic device may further include an antenna disposed on thesubstrate.

The antenna may transmit and/or receive radio signals in a millimeterwavelength band.

Other features and aspects will be apparent from the following detaileddescription, the drawings, and the claims.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a cross-sectional view of a semiconductor package according toan embodiment.

FIG. 2 is a cross-sectional view taken along a line I-I′ of FIG. 1.

FIG. 3 is a view of a modified example of a signal transfer part shownin FIG. 2.

FIG. 4 is a view of a method for manufacturing the semiconductor packageshown in FIG. 1.

FIG. 5 is a view of a modified example of a heat transfer part shown inFIG. 2.

FIGS. 6 through 9 are cross-sectional views of each of semiconductorpackages according to embodiments.

FIG. 10 is a view of an electronic device according to an embodiment.

Throughout the drawings and the detailed description, the same referencenumerals refer to the same elements. The drawings may not be to scale,and the relative size, proportions, and depiction of elements in thedrawings may be exaggerated for clarity, illustration, and convenience.

DETAILED DESCRIPTION

The following detailed description is provided to assist the reader ingaining a comprehensive understanding of the methods, apparatuses,and/or systems described herein. However, various changes,modifications, and equivalents of the methods, apparatuses, and/orsystems described herein will be apparent after an understanding of thedisclosure of this application. For example, the sequences of operationsdescribed herein are merely examples, and are not limited to those setforth herein, but may be changed as will be apparent after anunderstanding of the disclosure of this application, with the exceptionof operations necessarily occurring in a certain order. Also,descriptions of features that are known in the art may be omitted forincreased clarity and conciseness.

The features described herein may be embodied in different forms, andare not to be construed as being limited to the examples describedherein. Rather, the examples described herein have been provided merelyto illustrate some of the many possible ways of implementing themethods, apparatuses, and/or systems described herein that will beapparent after an understanding of the disclosure of this application.

Throughout the specification, when an element, such as a layer, region,or substrate, is described as being “on,” “connected to,” or “coupledto” another element, it may be directly “on,” “connected to,” or“coupled to” the other element, or there may be one or more otherelements intervening therebetween. In contrast, when an element isdescribed as being “directly on,” “directly connected to,” or “directlycoupled to” another element, there can be no other elements interveningtherebetween.

As used herein, the term “and/or” includes any one and any combinationof any two or more of the associated listed items.

Although terms such as “first,” “second,” and “third” may be used hereinto describe various members, components, regions, layers, or sections,these members, components, regions, layers, or sections are not to belimited by these terms. Rather, these terms are only used to distinguishone member, component, region, layer, or section from another member,component, region, layer, or section. Thus, a first member, component,region, layer, or section referred to in examples described herein mayalso be referred to as a second member, component, region, layer, orsection without departing from the teachings of the examples.

Spatially relative terms such as “above,” “upper,” “below,” and “lower”may be used herein for ease of description to describe one element'srelationship to another element as shown in the figures. Such spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. For example, if the device in the figures is turned over,an element described as being “above” or “upper” relative to anotherelement will then be “below” or “lower” relative to the other element.Thus, the term “above” encompasses both the above and below orientationsdepending on the spatial orientation of the device. The device may alsobe oriented in other ways (for example, rotated 90 degrees or at otherorientations), and the spatially relative terms used herein are to beinterpreted accordingly.

The terminology used herein is for describing various examples only, andis not to be used to limit the disclosure. The articles “a,” “an,” and“the” are intended to include the plural forms as well, unless thecontext clearly indicates otherwise. The terms “comprises,” “includes,”and “has” specify the presence of stated features, numbers, operations,members, elements, and/or combinations thereof, but do not preclude thepresence or addition of one or more other features, numbers, operations,members, elements, and/or combinations thereof.

Due to manufacturing techniques and/or tolerances, variations of theshapes shown in the drawings may occur. Thus, the examples describedherein are not limited to the specific shapes shown in the drawings, butinclude changes in shape that occur during manufacturing.

The features of the examples described herein may be combined in variousways as will be apparent after an understanding of the disclosure ofthis application. Further, although the examples described herein have avariety of configurations, other configurations are possible as will beapparent after an understanding of the disclosure of this application.

FIG. 1 is a cross-sectional view of a semiconductor package according toan embodiment and FIG. 2 is a cross-sectional view taken along a lineI-I′ of FIG. 1.

Referring to FIGS. 1 and 2, a semiconductor package 100 according to anembodiment, a semiconductor package transmitting and receiving radiosignals using a millimeter wave band, includes a substrate 10, a circuitpart 1, a signal transfer part 20, a sealing part 50, and a heatradiating part 30.

A substrate 10 may be a multilayer substrate formed by repeatedlystacking insulating layers and wiring layers. However, a double-sidedsubstrate wherein the wiring layers are formed on opposite surfaces ofone insulating layer may also be used as needed.

The wiring layer of the substrate 10 includes one or more antennas 12.The antennas 12 may be disposed on any one of an upper surface (a firstsurface) or a side surface of the substrate 10, and an inside of thesubstrate. Further, the antenna 12 may include at least one of a dipoleantenna, a monopole antenna, and a patch antenna.

In an embodiment, the antenna 12 means a radiator, but may also beunderstood to include the wiring connecting the radiator and anelectronic element with each other. Further, the antenna 12 according toan embodiment may radiate or receive a radio frequency (RF) signal in amillimeter (mm) wave band.

The wiring layer electrically connects the circuit part 1 and theantenna 12 with each other. The wiring layer may be formed of a metalhaving conductivity such as copper (Cu), nickel (Ni), aluminum (Al),silver (Ag), or gold (Au).

According to an embodiment, a distance between the circuit part 1 andthe antenna 12 may be relatively shorter than in a conventionalsemiconductor package using a low frequency band. To this end, accordingto an embodiment, the antenna 12 is formed on a first surface of thesubstrate 10 and the circuit part 1 is mounted on a second surface ofthe substrate 10. As a result, signal power loss is significantlyreduced and degradation in reflection characteristics is reduced.

As the substrate 10, various kinds of substrates (e.g., a printedcircuit board, a flexible substrate, a ceramic substrate, a glasssubstrate, etc.), known in the art, may be used.

The circuit part 1 includes one or more elements and is mounted on atleast one of opposite surfaces of the substrate 10. Here, the elementsinclude both active elements and passive elements.

Further, the circuit part 1 may include at least one general element 1 band heating element 1 a that generates substantial heat in operation.The heating element 1 a may include an active surface on which aterminal is formed and an inactive surface, an opposite surface of theactive surface, and may be mounted on the second surface on which theantenna 12 is not disposed among the surfaces of the substrate 10.

For example, in the case in which the antenna 12 is disposed on theupper surface of the substrate 10 as shown in FIG. 1, the heatingelement 1 a may be mounted in a flip-chip bonding structure on a lowersurface (a second surface) of the substrate 10. In this case, a gapbetween the heating element 1 a and the substrate 10 may be filled withan underfill resin.

The heating element 1 a may include multiple analog components (MAC), abase band signal processing circuit, or the like, but is not limitedthereto.

The signal transfer part 20 is disposed on the second surface on whichthe circuit part 1 is disposed among the opposite surfaces of thesubstrate 10 and have a mounting height higher than the circuit part 1.Therefore, the signal transfer part 20 protrudes further downward fromthe substrate 10 as compared to the circuit part 1.

Further, the signal transfer part 20 includes a connection conductor 21having one end, electrically connected to the substrate 10, and aninsulating part 22 protecting the connection conductor 21.

The connection conductor 21 is disposed in the sealing part 50 so as topenetrate through the sealing part 50 and have one end bonded to thesubstrate 10 and the other end connected to a connection terminal 24.Therefore, the connection conductor 21 may be formed to have variousforms as long as it electrically connects between the substrate 10 andthe connection terminal 24.

The connection conductor 21 may be formed of a conductive material andmay be formed of, for example, copper, gold, silver, aluminum, or alloysthereof.

The insulating part 22 is disposed on a surface of the connectionconductor 21 to protect the connection conductor 21. Therefore, theinsulating part 22 may embed the connection conductor 21 and expose onlyopposite end portions of the connection conductor 21 to the outside. Theinsulating part 22 may be formed of an insulation resin material.However, the insulating part 22 is not limited thereto.

As the signal transfer part 20 configured as described above, forexample, a printed circuit board (PCB) may be used, or the signaltransfer part 20 may be configured in a form similar thereto. However,the signal transfer part 20 is not limited thereto, but may be variouslymodified as in embodiments to be described below.

Meanwhile, since the signal transfer part 20 is embedded in the sealingpart 50 according to an embodiment, the sealing part 50 may also serveas the insulating part 22. Therefore, the signal transfer part 20 mayalso include only the connection conductor 21 while the insulating part22 can be omitted as needed.

The connection terminal 24 may be coupled to the other end of theconnection conductor 21.

When the semiconductor package 24 is mounted on the main substrate 90,the connection terminal 24 physically and electrically connects thesemiconductor package 100 and the main substrate 90 with each other. Theconnection terminal 24 may be formed of a conductive adhesive such as asolder, but is not limited thereto.

Meanwhile, as shown in FIG. 2, the signal transfer part 20 according toan embodiment is formed in a shape of a quadrangular ring along anoutline of the substrate 10. However, the configuration of presentdisclosure is not limited thereto, but may be variously modified.

FIG. 3 is a view of a modified example of the signal transfer part shownin FIG. 2.

Referring to FIG. 3, the signal transfer part 20 may be formed in a barshape, or may be formed in a curved linear shape. Further, the signaltransfer part 20 may also be formed in a block shape in which theconnection terminals 24 are arranged in columns. However, the signaltransfer part 20 may be variously modified and for example, may beformed in a circular shape, an oval shape, or an irregular shape.

Referring again to FIGS. 1 and 2, the heat radiating part 30 will bedescribed.

The heat radiating part 30 is coupled to the inactive surface of theheating element 1 a to radiate heat generated from the heating element 1a to the outside.

To this end, the heat radiating part 30 includes a heat transfer part 32and a heat radiating terminal 34.

The heat transfer part 32 may be formed in a flat plate form or a blockform and a first surface thereof may be bonded to the inactive surfaceof the heating element 1 a. In addition, one or more heat radiatingterminals 34 may be bonded to a second surface of the heat transfer part32.

Accordingly, the heat conducted to the first surface of the heattransfer part 32 from the heating element 1 a may be transferred to theheat radiating terminal 34 through the second surface of the heattransfer part 32.

The heat transfer part 32 may be formed of various materials as long asthe materials have high heat conductivity. For example, the heattransfer part 32 may be formed of a metal member and may be formed of amaterial such as copper (Cu), nickel (Ni), titanium (Ti), gold (Au), tin(Sn), or the like. However, the material of the heat transfer part 32 isnot limited thereto, but a non-metal having heat conductivity, such asgraphite, may also be used.

The heat transfer part 32 may be bonded to the heating element 1 athrough a bonding layer 35.

The bonding layer 35 may be formed by coating the inactive surface ofthe heating element 1 a or the first surface of the heat transfer part32 with a resin based adhesive such as an epoxy. In this case, thebonding layer 35 is formed of a non-conductive material.

However, the material of the bonding layer 35 is not limited thereto,but the bonding layer 35 may also be formed by forming a metal thin filmlayer on the inactive surface. In this case, the heat transfer part 32may be bonded to the bonding layer 35 by a method such as a soldering orthe like.

Meanwhile, when the heat transfer part 32 has adhesive properties, thebonding layer may be omitted.

According to an embodiment, the heat transfer part 32 is formed in aform of a quadrangular flat plate and may have an area wider than thatof the inactive surface of the heating element 1 a. However, a shape ora size of the heat transfer part 32 is not limited thereto, but may bevariously modified as needed.

The heat radiating terminals 34 may be bonded to the second surface ofthe heat transfer part 32.

The heat radiating terminals 34 may be formed of the same material asthe connection terminals 24. Accordingly, the heat radiating terminals34 may be collectively bonded to the main substrate 90 together with theconnection terminals 24 in a manufacturing process.

Further, the heat radiating terminal 34 and the connection terminal 24may be formed by the same method by using the same member. For example,the heat radiating terminal 34 and the connection terminal 24 may beformed by each bonding a solder ball formed in the same size to theconnection conductor 21 and the heat transfer part 32. Therefore, theheat radiating terminals 34 may be formed to have the same or similarsize as the connection terminals 24.

The sealing part 50 may be formed on the second surface of the substrate10. Therefore, the sealing part 50 is disposed to embed the circuit part1 and the signal transfer part 20 which are mounted on the secondsurface of the substrate 10.

The sealing part 50 is filled between the respective elements 1 a and 1b configuring the circuit part 1 to thereby prevent an occurrence of anelectrical short circuit between the elements 1 a and 1 b, to enclosethe outer portions of the elements 1 a and 1 b, to fix the elements 1 aand 1 b onto the substrate 10, and to safely protect the elements 1 aand 1 b from external shock.

Further, the sealing part 50 embeds the signal transfer part 20 tothereby firmly fix the signal transfer part 20 to the substrate 10 andto protect the signal transfer part 20 from external shocks.

As the sealing part 50 is formed, only the connection terminals 24 andthe heat radiating terminals 34 may be exposed externally of the sealingpart 50 from the lower surface of the semiconductor package 100 as shownin FIG. 2.

The sealing part 50 may be formed of an insulation material. Accordingto an embodiment, an epoxy molding compound (EMC) may be used, but thematerial of the sealing part 50 is not limited thereto.

Meanwhile, the main substrate 90 shown in FIG. 1, a substrate on whichthe semiconductor package 100 is mounted, may refer to a circuit boardincluded in various applications (e.g., a portable terminal, a computer,a laptop, a TV, and the like). Therefore, as the main substrate 90,various known substrates such as a printed circuit board, a flexiblesubstrate, a ceramic substrate, a glass substrate, and the like may beused.

Electrode pads 91 and 92 may be formed on the first surface of the mainsubstrate 90. The electrode pads 91 and 92 include a signal pad 91connected to the connection terminals 24, and the heat radiating pad 92connected to the heat radiating terminals 34.

Next, a method for manufacturing a semiconductor package according to anembodiment will be described.

FIG. 4 shows a method for manufacturing a semiconductor packageillustrated in FIG. 1.

Referring to FIG. 4, in a semiconductor package according to anembodiment, first, the circuit part 1 is formed on the second surface ofthe substrate 10 including the antenna 12 and the signal transfer part20 is disposed on the second surface of the substrate 10 (S1). Thecircuit part 1 and the signal transfer part 20 are collectively mountedon the substrate 10 through a conductive adhesive such as a solder.

In addition, the heat transfer part 32 is disposed on the inactivesurface of the heating element 1 a. As described above, the heattransfer part 32 is bonded to the heating element 1 a through thebonding layer 35.

Next, the sealing part 50 that embeds the entirety of the circuit part 1and the signal transfer part 20 is formed (S2). The sealing part 50 maybe formed by transfer-molding the EMC, but is not limited thereto.

Next, a via hole 55 is formed so that the connection terminal 24 and aportion of the signal transfer part 20 are exposed (S3). The via hole 55may be formed using laser drilling. Therefore, the via hole 55 may beformed in a conical shape having a smaller cross-sectional area towardthe bottom.

Next, the semiconductor package 100 may be completed by forming theconnection terminal 24 and the heat radiating terminal 34 in the viahole 55. The connection terminal 24 and the heat radiating terminal 34are each bonded to the connection conductor 21 and the heat transferpart 32 by disposing the solder ball in the via hole 55 and then meltingand curing the disposed solder ball.

The semiconductor package 100 according to an embodiment configured asdescribed above radiates heat from the heating element 1 a to the mainsubstrate 90 through the heat transfer part 32 and the heat radiatingterminals 34. Therefore, heat radiating characteristics of thesemiconductor package may be improved as compared to the related art.

Meanwhile, the semiconductor package according to the description is notlimited to the embodiments described above, but may be variouslymodified.

FIG. 5 is a view illustrating a modified example of the heat transferpart illustrated in FIG. 2.

Referring to FIG. 5, the heat transfer part 32 may have a step 33 formedalong an edge of the first surface in contact with the bonding layer 35.

Such a step 33 is provided to significantly reduce an influence of aburr B generated in a process of manufacturing the heat transfer part32.

The heat transfer part 32 may be formed by various methods, for example,by a press processing. In this case, the burr B may be formed in an edgeportion of the first surface of the heat transfer part 32.

In the case in which the burr B is formed as described above, since adegree of precision is decreased due to interruption with the burr B inthe process of coating the bonding layer 35 onto the heat transfer part32, a problem in reliability may occur.

Therefore, according to an embodiment, the heat transfer part 32 ismanufactured by first forming the step 33 in the edge portion by thepress processing and then performing a cutting process. In this case,since the burr B is positioned within a thickness range of the step 33as illustrated in FIG. 5, the interruption with the burr B does notoccur in the process of coating the bonding layer 35 on the firstsurface of the heat transfer part 32.

Meanwhile, the present embodiment illustrated in FIG. 5 illustrates acase in which the steps 33 are formed in both the first surface and thesecond surface of the heat transfer part 32 by way of example. However,the position of the step 33 is not limited thereto, but the step mayalso be formed in only one surface of the first surface and the secondsurface in which the burr B is formed.

Further, according to an embodiment, the heat transfer part 32 includesone or more coupling grooves 36.

The coupling groove 36 may have a hole form penetrating through the heattransfer part 32 and may be filled with the sealing part 50. Thereby,the heat transfer part 32 may be more firmly coupled to the sealing part50.

The coupling groove 36 may be used as a fiducial mark, when the heattransfer part 32 is bonded to the heating element 1 a. Therefore, in theprocess of manufacturing the semiconductor package, the heat transferpart 32 and the heating element 1 a may be more precisely coupled toeach other.

Meanwhile, in a case in which the coupling groove 36 is not used as thefiducial mark, the coupling groove 36 may be formed in a form of agroove, not a through-hole.

The coupling groove 36 is formed in each tip portion of the heattransfer part 32. However, the coupling groove 36 is not limitedthereto, but may be disposed in various positions as needed, and aplurality of coupling grooves may be provided, depending on a thicknessor an area of the heat transfer part 32. For example, the couplinggrooves can be distributed over the entire area of the heat transferpart or over a part of the area of the heat transfer part.

FIGS. 6 through 8 are cross-sectional views of each of semiconductorpackages according to embodiments.

Referring first to FIG. 6, in the semiconductor package according to anembodiment, the heat transfer part 32 may be formed to have the same ora similar area to that of the inactive surface of the heating element 1a.

Further, the heating element is according to an embodiment may be theelement having a thickness thicker than the embodiment described above.Thereby, the heat transfer part 32 has a thickness that is thinner thanthe embodiment described above.

In an example in which the heat transfer part 32 needs to be formed tohave a thin thickness, the heat transfer part 32 is formed on theinactive surface of the heating element 1 a by a method such asdepositing or plating, but is not limited thereto.

Further, a portion of the heat transfer part 32 according to anembodiment may be exposed externally of the sealing part 50. Therefore,heat radiating terminals 34 are disposed at the portion that the heattransfer part 32 is exposed externally of the sealing part 50.

In the semiconductor package according to an embodiment, the entirety ofthe second surface of the heat transfer part 32 to which a heatradiating terminal 34 is bonded is exposed externally of the sealingpart 50. However, various modifications are possible. For example, afterthe step is formed in the second surface of the heat transfer part 32,only a portion of the second surface may be exposed.

Meanwhile, in an example in which the heat radiating terminal 34 isbonded to the exposed second surface of the heat transfer part 32, theheat radiating terminal 34 may melt in the process of bonding the heatradiating terminal 34 to the heat transfer part 32 and may be diffusedalong the second surface of the heat transfer part 32. In this case, itis difficult for the heat radiating terminal 34 to maintain a shape of aball illustrated in FIG. 6.

Therefore, the semiconductor package according to an embodiment includesthe insulating layer 38 defining the position of the heat radiatingterminal 34 on the second surface of the heat transfer part 32. Theinsulating layer 38 is disposed substantially on the entirety of thesecond surface of the heat transfer part 32 exposed to the outside, andis formed in a form in which only the portion in which the heatradiating terminal 34 is formed is removed, and for example, may beformed of a solder resist.

Therefore, the method for manufacturing the semiconductor packageaccording to an embodiment includes an operation of forming the sealingpart 50 to completely embed the signal transfer part 20 and the heattransfer part 32 and then removing a portion of the sealing part 50 sothat the second surface of the heat transfer part 32 is exposed. Thismay be performed by a polishing operation.

In addition, the semiconductor package may be completed by performing anoperation of forming the insulating layer 38 where the portion on whichthe heat radiating terminal 34 is formed is removed on the secondsurface of the heat transfer part 32, an operation of forming the viahole 55 in the sealing part 50, and an operation of bonding theconnection terminal 24 and the heat radiating terminal 34 to the signaltransfer part 20 and the heat transfer part 32. Here, the operation offorming the via hole 55 may precede the operation of forming theinsulating layer 38 as needed.

Referring to FIG. 7, in the semiconductor package according to anembodiment, the heat transfer part 32 is formed in a cap form. In moredetail, the heat transfer part 32 is formed in a bowl form including aninternal space and is coupled to the heating element 1 a in a formaccommodating the heating element 1 a in the internal space.

Accordingly, the inactive surface of the heating element 1 a is bondedto a bottom surface of the internal space of the heat transfer part 32.

A side wall of the heat transfer part 32 may be bonded to the substrate10. However, the side wall of the heat transfer part 32 is not limitedthereto, but may also be configured to be spaced apart from thesubstrate 10 as needed. The term “spaced apart” as used herein, cangenerally mean not in contact with.

Further, one or more through-holes 36 a are formed in the heat transferpart 32. The through-holes 36 a are provided to dispose the sealing part50 in the internal space of the heat transfer part 32. As thethrough-holes 36 a are provided, a melted resin, a raw material of thesealing part 50, is introduced into the internal space of the heattransfer part 32 through the through-hole in a process of manufacturingthe sealing part 50, thereby filling the internal space of the heattransfer part 32.

Meanwhile, although not illustrated, similarly to the case describedabove of FIG. 6, the heat transfer part 32 according to an embodimentmay also be exposed externally of the sealing part 50.

Referring to FIG. 8, the semiconductor package according to anembodiment may configure the signal transfer part 20 using theconductive member 23 such as a solder ball. In this case, the signaltransfer part 20 is not integrally formed and conductive members aredisposed to be spaced apart from each other. Further, costs formanufacturing the signal transfer part 20 are reduced.

In the method for manufacturing the semiconductor package according toan embodiment, after the conductive members 23 which are separatelymanufactured are mounted on the second surface of the substrate 10, thesealing part 50 enclosing the conductive members 23 is formed. Here,since a space is formed between the conductive members 23 as theconductive members 23 are disposed to be spaced apart from each other,the melted resin, the raw material of the sealing part 50, easily flowthrough such a space. Therefore, the sealing part 50 is easilymanufactured.

The subsequent manufacturing process may be performed in a similarmanner to the embodiments described above.

However, the method for manufacturing the semiconductor packageaccording to the description is not limited to the above-mentionedmethod, but as illustrated in FIG. 9, the conductive members 23 may alsobe manufactured by first forming the sealing part 50 on the secondsurface of the substrate 10, forming the via hole that perfectlypenetrates through the sealing part 50, and then filling the conductivematerial in the via hole. In this case, the via hole may be formed usinglaser drilling, and the conductive material may be filled in the viahole in a form of paste and be then melted and cured, or may be formedin the via hole by a plating manner.

Further, in the semiconductor package illustrated in FIG. 9, the heatradiating terminal 34 is not directly bonded to the heat transfer part32, but after a heat radiating via 34 a penetrating through the sealingpart 50 is disposed, the heat radiating terminal 34 is bonded to theheat radiating via 34 a.

The heat radiating via 34 a may be simultaneously formed in theoperation of forming the conductive members 23. Further, the heatradiating terminal 34 may be simultaneously bonded to the heat radiatingvia 34 a in the operation of bonding the connection terminal 24 to theconductive member 23.

Meanwhile, although not illustrated, the pad may be formed on a bondedsurface of the heat radiating via 34 a to which the heat radiatingterminal 34 is bonded. Further, the heat radiating terminal 34 and theheat radiating via 34 a may be formed of the same material, but are notlimited thereto.

FIG. 10 is a view schematically illustrating an electronic deviceaccording to an embodiment.

Referring to FIG. 10, in the electronic device according to anembodiment, the semiconductor package 100 illustrated in FIG. 1 ismounted on the main substrate 90. However, the electronic device is notlimited thereto, and the semiconductor package described in otherembodiments may also be used.

The main substrate 90, the substrate on which the semiconductor package100 is mounted as described above, may refer to a circuit board includedin the applications (e.g., a portable terminal, a computer, a laptop, aTV, and the like). Therefore, as the main substrate 90, various knownsubstrates such as a printed circuit board, a flexible substrate, aceramic substrate, a glass substrate, and the like may be used.

Electrode pads 91 and 92 are formed on the first surface of the mainsubstrate 90. The electrode pads 91 and 92 include a signal pad 91connected to the connection terminals 24 and the heat radiating pad 92connected to the heat radiating terminals 34.

Further, one or more heat radiating vias 95 are disposed in the mainsubstrate 90.

The heat radiating via 95 is disposed to penetrate through the mainsubstrate 90 and have one end connected to the heat radiating pad 92. Inaddition, the other end of the heat radiating via 95 is exposed to thesecond surface of the main substrate 90 and connected to the heatradiating member 80.

The heat radiating member 80 is coupled to the second surface of themain substrate 90 and connected to the heat radiating via 95.Accordingly, the heat transferred from the heat radiating via 95 isdischarged to the outside through the heat radiating member 80.

As the heat radiating member 80, a heat sink may be used, but the heatradiating member is not limited thereto. Further, the heat radiatingmember 80 may be omitted as needed.

For example, in a case in which the heating element is electricallyconnected to the substrate through a bonding wire, the heat transferpart may be bonded to the active surface of the heating element.

Further, the embodiments described above may be combined with eachother. For example, the conductive member illustrated in FIG. 8 may beall applied to the semiconductor packages disclosed in otherembodiments.

As set forth above, according to embodiments, the semiconductor packageand the electronic device having the same may radiate the heat of theheating element to the main substrate through the heat transfer part andthe heat radiating terminals. Therefore, heat radiating characteristicsof the semiconductor package are improved as compared to the relatedart.

While this disclosure includes specific examples, it will be apparentafter an understanding of the disclosure of this application thatvarious changes in form and details may be made in these exampleswithout departing from the spirit and scope of the claims and theirequivalents. The examples described herein are to be considered in adescriptive sense only, and not for purposes of limitation. Descriptionsof features or aspects in each example are to be considered as beingapplicable to similar features or aspects in other examples. Suitableresults may be achieved if the described techniques are performed in adifferent order, and/or if components in a described system,architecture, device, or circuit are combined in a different manner,and/or replaced or supplemented by other components or theirequivalents. Therefore, the scope of the disclosure is defined not bythe detailed description, but by the claims and their equivalents, andall variations within the scope of the claims and their equivalents areto be construed as being included in the disclosure.

What is claimed is:
 1. A semiconductor package comprising: a substratecomprising a wiring layer; a heating element disposed on a first surfaceof the substrate and connected to the wiring layer; a heat radiatingpart coupled to the heating element; and a signal transfer partelectrically connecting the substrate to a main substrate; a sealingpart substantially enclosing the signal transfer part and the heatingelement, wherein the sealing part is formed of a single insulatingmaterial, and the heat radiating part includes a heat transfer partconnected to the heating element and heat radiating terminals connectingthe heat transfer part and the main substrate to each other.
 2. Thesemiconductor package of claim 1, wherein the heat transfer part has aflat plate shape or a block shape and comprises a metal.
 3. Thesemiconductor package of claim 1, further comprising connectionterminals disposed on one side of the signal transfer part and connectedto the main substrate, wherein the heat radiating terminal comprises amaterial in common with the connection terminal and has substantiallythe same size as the connection terminal.
 4. The semiconductor packageof claim 1, wherein the single insulating material is epoxy moldingcompound (EMC).
 5. The semiconductor package of claim 1, wherein theheat transfer part is embedded in the sealing part, and the heatradiating terminal penetrates through the sealing part and is connectedto the heat transfer part.
 6. The semiconductor package of claim 5,wherein the heat transfer part comprises one or more coupling grooves,and a portion of the sealing part is disposed in the one or morecoupling grooves.
 7. The semiconductor package of claim 6, wherein theone or more coupling grooves comprise a hole penetrating through theheat transfer part, and the one or more coupling grooves are disposed tobe distributed over an area of the heat transfer part.
 8. Thesemiconductor package of claim 2, wherein the heat transfer partcomprises a step disposed in an edge of at least one surface of a firstsurface bonded to the heating element and a second surface bonded to theheat radiating terminal of the heat transfer part.
 9. The semiconductorpackage of claim 4, wherein a portion of the heat transfer part isexposed externally of the sealing part, and the heat radiating terminalis connected to the portion of the heat transfer part exposed externallyof the sealing part.
 10. The semiconductor package of claim 4, whereinthe heat transfer part comprises a case comprising an internal space,and the heating element is disposed in the internal space of the case.11. The semiconductor package of claim 10, wherein the case includes oneor more through-holes, and the sealing part is disposed in the internalspace of the case through the through-holes.
 12. The semiconductorpackage of claim 1, wherein the signal transfer part comprises aconnection conductor comprising one end connected to the substrate andanother end connected to the main substrate through a connectionterminal, and an insulating part enclosing the connection conductor. 13.The semiconductor package of claim 4, wherein the signal transfer partcomprises melted and cured solder balls in the sealing part.
 14. Thesemiconductor package of claim 1, further comprising a bonding layerinterposed between the heating element and the heat transfer part. 15.The semiconductor package of claim 4, wherein a surface area of the heattransfer part facing the heating element is wider than a surface area ofthe heating element facing the heat transfer part.